Day / Time
Date(s) - 13/01/2015
13 h 00 min - 14 h 00 min
Ecole de Physique, Auditoire Stueckelberg, 24 quai Ernest-Anserme
“Cointegration of high mobility materials for future CMOS: trends and challenges”
IBM Zurich Research Laboratory, Rüschlikon
High-mobility channels made of InGaAs and SiGe alloys are the leading candidates to replace silicon in MOSFETs for future low power CMOS applications. Although the cointegration of such heterogeneous materials has been proposed by numerous methods, to date the only hybrid CMOS technology demonstrations rely on direct wafer bonding (DWB). I shall discuss the concepts and challenges associated with the fabrication of large InGaAs on insulator (InGaAs-o-I) substrates on silicon by the DWB method and the electrical performances of our short channel devices and hybrid inverter circuits.